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inchange semiconductor product specification silicon npn power transistors 2SD5702 description ? ? with to-3p(h)is package ? built-in damper diode ? high voltage ,high speed applications ? for color display horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 6 a i cm collector current-peak 16 a p c collector power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3p(h)is) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD5702 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =4a ;i b =0.8a 2.0 5.0 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 | a i ebo emitter cut-off current v eb =4v; i c =0 40 200 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 30 h fe-2 dc current gain i c =3a ; v ce =5v 5 15 f t transition frequency i c =1a ; v ce =10v 3 mhz v f diode forward voltage i f =6a 2.0 v t f fall time i c =4a ;i b1 =0.8a;i b2 =-1.6a v cc =200v; r l =50 |? 0.4 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD5702 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)

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